Title :
Transient simulation of nano-scale UTBB nmosfets by deterministically solving BTE
Author :
Shao-yan Dia ; Kai Zhao ; Tiao Lu ; Gang Du ; Xiao-yan Liu
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
The transient response to the drain voltage of a nano scale Ultra-Thin Body and BOX (UTBB) nMOSFET are investigated by deterministically solving the time dependent Boltzmann Transport Equation (BTE). The relaxation process of subbands profile, electron density and current is investigated. The relaxation time of the device is about 0.1ps at typical biases, which is several times larger than the electron transit time.
Keywords :
MOSFET; transient response; BTE; device relaxation time; drain voltage; electron density; electron transit time; nano-scale UTBB nMOSFET; nanoscale ultrathin body-box nMOSFET; subband profile relaxation process; transient response; transient simulation; Abstracts; Acceleration; Educational institutions; Logic gates; MOSFET circuits; Semiconductor device modeling;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021479
