Title :
Compact modelling and simulation of extended-gate ion-sensitive field-effect-transistor
Author :
Yueyou Ma ; Chenyu Wen ; Ruixue Zeng ; Ming Xu ; Jiangfeng Pan ; Dongping Wu
Author_Institution :
State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China
Abstract :
Extended-gate ion sensitive field-effect-transistor (EG-ISFET), which can be easily integrated in conventional large-scale integrated circuits, has recently disrupted the field of semiconductor genetics and gained accelerated momentum in more biosensing applications. Comprehensive understanding and modeling of the EG-ISFET which generally comprises of reference electrode, electrolyte, electrical double layer and an extended-gate MOSFET are prerequisite for designing integrated circuits using EG-ISFET as the sensing device. In this work, we propose an improved equivalent circuit model of EG-ISFET and provide in-depth understanding of EG-ISFET through simulating its DC and transient characteristics using SPICE. These results pave the way to expedite using EG-ISFET in emerging semiconductor biosensing applications.
Keywords :
MOSFET; biosensors; electrodes; electrolytes; equivalent circuits; ion sensitive field effect transistors; semiconductor device models; DC characteristics; EG-ISFET; SPICE; electrical double layer; electrolyte; extended-gate MOSFET; extended-gate ion-sensitive field-effect-transistor; gained accelerated momentum; improved equivalent circuit model; large-scale integrated circuits; reference electrode; semiconductor biosensing; semiconductor genetics; sensing device; transient characteristics; Electrodes; Equivalent circuits; Integrated circuit modeling; MOSFET; Semiconductor device modeling; Sensors; Transient analysis;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021480
