DocumentCode :
242108
Title :
Simulation study of terahertz detectors with ungated regions and diffusion current
Author :
Sung-Min Hong ; Jae-hyung Jang
Author_Institution :
Sch. of Inf. & Commun., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea
fYear :
2014
fDate :
28-31 Oct. 2014
Firstpage :
1
Lastpage :
3
Abstract :
Terahertz detectors based on the plasma instability are simulated. The impact of the diffusion current is investigated. It is found that the inclusion of the diffusion current into the simulation increases the resonance frequency. Moreover, the ungated region between the source contact and the gated channel region is included in the simulation. It is found that the non-vanishing source impedance originated from the ungated region introduces a huge difference on the resonance frequency.
Keywords :
plasma instability; terahertz wave detectors; diffusion current; gated channel region; non-vanishing source impedance; plasma instability; resonance frequency; source contact; terahertz detector simulation; ungated region; Abstracts; HEMTs; Logic gates; MODFETs;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
Type :
conf
DOI :
10.1109/ICSICT.2014.7021481
Filename :
7021481
Link To Document :
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