Silicon bipolar fixed and variable gain amplifier MMICs for microwave and lightwave applications up to 6 GHz

Author

Kipnis, I. ; Kukielka, J.F. ; Wholey, J. ; Snapp, C.P.

Author_Institution

Avantek, Inc., Newark, CA, USA

fYear

1989

fDate

12-13 June 1989

Firstpage

101

Lastpage

104

Abstract

Three MMICs for microwave applications up to 6 GHz and for digital lightwave applications up to 5 Gb/s are presented. They are: (1) a 8-dB gain, 6-GHz half-power loss, fixed-gain wideband amplifier, fabricated in modified discrete transistor process: (2) a high-gain low-noise (1.6 dB) amplifier that can also be effectively used as a transimpedance amplifier; and (3) a 3-GHz variable-gain amplifier (VGA) with a wide gain control range (50 dB), suitable for 5 Gb/s-data rates in digital lightwave systems. The circuits were fabricated using a nonpolysilicon-emitter silicon bipolar process for transistors with a gain-bandwidth product f/sub T/=10 GHz and maximum oscillation frequency f/sub max/=20 GHz.<>

Keywords

MMIC; bipolar integrated circuits; elemental semiconductors; integrated circuit technology; microwave amplifiers; semiconductor device models; silicon; wideband amplifiers; 1.6 dB; 20 GHz; 3 GHz; 5 Gbit/s; 6 GHz; LNA; Si; VGA; amplifier MMICs; digital lightwave applications; gain-bandwidth product; low noise amplifiers; oscillation frequency; transimpedance amplifier; variable-gain amplifier; wideband amplifier; Broadband amplifiers; Capacitors; Circuit topology; Gain; Low-noise amplifiers; MMICs; Microwave amplifiers; Military communication; Resistors; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1989. Digest of Papers., IEEE 1989

Conference_Location

Long Beach, CA, USA

Type

conf

DOI

10.1109/MCS.1989.37273

Filename

37273