• DocumentCode
    2421208
  • Title

    Silicon bipolar double balanced active mixer MMIC´s for RF and microwave applications up to 6 GHz

  • Author

    Wholey, Jim ; Kipnis, Lssy ; Snapp, Craig

  • Author_Institution
    Avantek Inc., Newark, CA, USA
  • fYear
    1989
  • fDate
    12-13 June 1989
  • Firstpage
    133
  • Lastpage
    137
  • Abstract
    The authors present an overview of the bipolar technology used to develop double-balanced active mixers using transistors with a gain-bandwidth product of 10 GHz and a maximum oscillation frequency of 20 GHz. These circuits are based on Gilbert-cell multipliers and exhibit conversion gain for RF and local oscillator bandwidths to 6 GHz and intermediate-frequency bandwidths to 2 GHz. The basic mixer circuit design is discussed and a technique for modeling its noise figure is presented. RF measurements for two representative designs are summarized.<>
  • Keywords
    MMIC; bipolar integrated circuits; elemental semiconductors; mixers (circuits); silicon; 20 GHz; 6 GHz; Gilbert-cell multipliers; MMIC; RF measurements; SHF; Si; bipolar IC; bipolar technology; conversion gain; double balanced active mixer; gain-bandwidth product; intermediate-frequency bandwidths; local oscillator bandwidths; mixer circuit design; noise figure; oscillation frequency; semiconductors; Bandwidth; Circuit synthesis; Frequency conversion; Isolation technology; Microwave transistors; Mixers; Parasitic capacitance; Radio frequency; Schottky diodes; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1989. Digest of Papers., IEEE 1989
  • Conference_Location
    Long Beach, CA, USA
  • Type

    conf

  • DOI
    10.1109/MCS.1989.37279
  • Filename
    37279