DocumentCode :
2421208
Title :
Silicon bipolar double balanced active mixer MMIC´s for RF and microwave applications up to 6 GHz
Author :
Wholey, Jim ; Kipnis, Lssy ; Snapp, Craig
Author_Institution :
Avantek Inc., Newark, CA, USA
fYear :
1989
fDate :
12-13 June 1989
Firstpage :
133
Lastpage :
137
Abstract :
The authors present an overview of the bipolar technology used to develop double-balanced active mixers using transistors with a gain-bandwidth product of 10 GHz and a maximum oscillation frequency of 20 GHz. These circuits are based on Gilbert-cell multipliers and exhibit conversion gain for RF and local oscillator bandwidths to 6 GHz and intermediate-frequency bandwidths to 2 GHz. The basic mixer circuit design is discussed and a technique for modeling its noise figure is presented. RF measurements for two representative designs are summarized.<>
Keywords :
MMIC; bipolar integrated circuits; elemental semiconductors; mixers (circuits); silicon; 20 GHz; 6 GHz; Gilbert-cell multipliers; MMIC; RF measurements; SHF; Si; bipolar IC; bipolar technology; conversion gain; double balanced active mixer; gain-bandwidth product; intermediate-frequency bandwidths; local oscillator bandwidths; mixer circuit design; noise figure; oscillation frequency; semiconductors; Bandwidth; Circuit synthesis; Frequency conversion; Isolation technology; Microwave transistors; Mixers; Parasitic capacitance; Radio frequency; Schottky diodes; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1989. Digest of Papers., IEEE 1989
Conference_Location :
Long Beach, CA, USA
Type :
conf
DOI :
10.1109/MCS.1989.37279
Filename :
37279
Link To Document :
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