Design and performance of a 2-18 GHz monolithic matrix amplifier

Author

Chang, A.P. ; Niclas, K.B. ; Cantos, B.D. ; Strifler, W.A.

Author_Institution

Watkins-Johnson Co., Palo Alto, CA, USA

fYear

1989

fDate

12-13 June 1989

Firstpage

139

Lastpage

141

Abstract

An amplifier that utilizes eight MESFETs that are evenly distributed over two tiers is considered. A brief description is presented of the circuit design and its fabrication. Among the test results measured for the experimental monolithic matrix amplifier are a small-signal gain of 15.5+or-0.9 dB and a maximum noise figure of 7 dB over the 2-18-GHz bandwidth. The maximum return loss is -12.5 dB for the input and -12 dB for the output port, corresponding to VSWRs of 1.62:1 and 1.67:1, respectively. Output powers at 1-dB, 2-dB, and 5-dB compression were measured; their minimum levels were at 15.5 dBm. 16.5 dBm, and 18.2 dBm, respectively. Over the temperature range of -55 degrees C to +95 degrees , the small-signal gain varies fairly uniformly. A maximum gain variation of 4.4 dB was measured over the entire temperature range. The maximum noise figure increased to 8.1 dB at 95 degrees C.<>

Keywords

MMIC; Schottky gate field effect transistors; field effect integrated circuits; microwave amplifiers; wideband amplifiers; -55 to 95 C; 12.5 dB; 15.5 dB; 2 to 18 GHz; 7 dB; MESFETs; MMIC; SHF; VSWRs; bandwidth; circuit design; fabrication; monolithic matrix amplifier; noise figure; performance; return loss; small-signal gain; temperature range; test results; Bandwidth; Circuit synthesis; Circuit testing; Distributed amplifiers; Fabrication; Gain measurement; MESFETs; Noise figure; Noise measurement; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1989. Digest of Papers., IEEE 1989

Conference_Location

Long Beach, CA, USA

Type

conf

DOI

10.1109/MCS.1989.37280

Filename

37280