Title :
Low-frequency noise analysis of DRAM peripheral transistors with La cap
Author :
Simoen, Eddy ; Ritzenthaler, R. ; Schram, T. ; Aoulaiche, Marc ; Spessot, A. ; Fazan, P. ; Na, H.-J. ; Lee, S.-G. ; Son, Yeongrack ; Noh, K.B. ; Arimura, H. ; Horiguchi, Naoto ; Thean, A. ; Claeys, Cor
Author_Institution :
Imec, Leuven, Belgium
Abstract :
In this paper, the impact of the thermal budget on the low-frequency (LF) noise of DRAM peripheral n-channel transistors with La cap implemented in the high-κ/metal gate stack is investigated. Confirmation of previous reports on the beneficial impact of La in-diffusion on the oxide trap density is obtained. At the same time, a peak in the oxide trap profile is demonstrated close to the SiO2/HfO2 interface.
Keywords :
DRAM chips; high-k dielectric thin films; integrated circuit noise; lanthanum; DRAM peripheral transistors; LF noise; La; high-κ-metal gate stack; lanthanum cap; low-frequency noise analysis; oxide trap density; oxide trap profile; thermal budget; Abstracts; Logic gates; MOSFET; Noise; Random access memory;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021489
