Title :
DC and RF characteristics study of MIM capacitors with various Al2O3 thicknesses
Author :
Jiahui Zhou ; Hudong Chang ; Xufang Zhang ; Zhenhua Zeng ; Xu Yang ; Haiou Li ; Honggang Liu
Author_Institution :
Microwave Device & IC Dept., Inst. of Microelectron., Beijing, China
Abstract :
Metal-insulator-metal (MIM) capacitors with atomic layer deposited (ALD) various Al2O3 thicknesses are investigated for radio frequency integrated circuit (RFIC) applications. For 20 nm Al2O3, the fabricated capacitor exhibits a high capacitance density of 3850 pF/mm2 and acceptable voltage coefficients of capacitance (VCCs) of 681 ppm/V2 and 134 ppm/V at 1 MHz. An outstanding VCCs of 74 ppm/V2 and 55 ppm/V is obtained by 100 nm thickness Al2O3 MIM capacitors. The impact of various dielectric thicknesses on RF characteristics such as Q factors and resonance frequency is also investigated. Moreover, a simplified small signal model of the MIM capacitors is described. Excellent agreement between measured and simulated data demonstrates the validity of this model.
Keywords :
MIM devices; Q-factor; aluminium compounds; atomic layer deposition; capacitors; dielectric materials; integrated circuit modelling; radiofrequency integrated circuits; ALD; Al2O3; MIM capacitors; Q factors; RFIC; atomic layer deposition; capacitance density; dielectric thicknesses; frequency 1 MHz; metal-insulator-metal capacitors; radio frequency integrated circuit; resonance frequency; signal model; size 100 nm; size 20 nm; voltage coefficients; Aluminum oxide; Capacitance; Capacitors; MIM capacitors; Q-factor; Radio frequency;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021494
