Title :
Analytical modeling for double-gate TFET with tri-material gate
Author :
Ping Wang ; Yiqi Zhuang ; Cong Li ; Zhi Jiang
Author_Institution :
Sch. of Microelectron., Xidian Univ., Xi´an, China
Abstract :
In this paper, a tri-material double-gate (TMDG) tunnel field effect transistor (TFET) is introduced. By using a variable separation technique, analytical full 2D channel potential and electric field models for TMDG TFET is derived from 2D Poisson´s equation. The electric field distribution is used to compute the tunneling generation rate and further numerically calculate the tunneling current. The results demonstrate that a smaller local minimum of conduction band at the source side and a larger tunneling barrier at the drain side are formed by the gate work function mismatch. This special band energy profile can significantly boost the on-state performance and suppress the off-state current induced by the ambipolar effect. The data extracted from the developed models are in good accordance with the TCAD simulation results.
Keywords :
Poisson equation; conduction bands; electric fields; field effect transistors; semiconductor device models; technology CAD (electronics); tunnel transistors; 2D Poissons equation; 2D channel potential; TCAD simulation; TMDG TFET; conduction band; double-gate TFET; electric field distribution; electric field models; trimaterial double-gate tunnel field effect transistor; tunneling barrier; tunneling current; tunneling generation rate; variable separation technique; Abstracts; Educational institutions; Logic gates; Numerical models;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021498
