Design of silicon-based Transient Voltage Suppressor to meet IEC system-level ESD specification for RS485 transceiver

Author

Xiangliang Jin ; Huihui Yuan ; Qi Jiang ; Yang Wang

Author_Institution

Fac. of Mater., Optoelectron. & Phys., Xiangtan Univ., Xiangtan, China

fYear

2014

fDate

28-31 Oct. 2014

Firstpage

1

Lastpage

3

Abstract

The Transient Voltage Suppressor (TVS) arrays are the best choice to protect RS485 interface transceiver. This paper proposes an On-Chip TVS (OCT) embedded in the half-duplex RS485 transceiver IC. It is composed of zener diodes and ordinary diodes and fabricated on 0.5μm CDMOS technology without extra process modification. RS485 transceiver with OCT has also been tested under the condition of IEC 61000-4-2 contact ±10kV stress and IEC 61000-4-4 Electrical Fast Transient (EFT) ±2KV stress. Results show no hard damage and latch-up issue. The RS485 transceiver chip occupies an area of 2.4×1.17mm².

Keywords

CMOS integrated circuits; Zener diodes; transceivers; transients; CDMOS technology; IEC 61000-4-4 electrical fast transient; IEC system-level ESD specification; OCT; RS485 interface transceiver; TVS arrays; Zener diodes; half-duplex RS485 transceiver IC; on-chip TVS; silicon-based transient voltage suppressor; Abstracts; Ammeters; Contacts; IEC standards; Reliability; Stress; Transceivers; OCT; RS485; ordinary diode; zener diode;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4799-3296-2

Type

conf

DOI

10.1109/ICSICT.2014.7021505

Filename

7021505