Device robust-design using multiple-response optimization technique

Author

Chen, Ming-Ru ; Chiang, Pad ; Lin, Any

Author_Institution

United Microelectron. Corp., Taiwan, China

fYear

2000

fDate

2000

Firstpage

46

Lastpage

49

Abstract

A test device of NMOS is obtained by using TCAD simulation tools with the critical electrical parameters being optimized simultaneously with respect to device operability, reliability, and power consumption. A novel optimization technique that expands the application of conventional design-of-experiments (DOE) technique such as the Taguchi Method, into the area of multiple-response problems, is preposed to aid the design of such a robust device. The simulation data of a 0.25 μm NMOS device are used to illustrate the implementation of this method

Keywords

MOSFET; Taguchi methods; design of experiments; optimisation; power consumption; semiconductor device models; semiconductor device reliability; semiconductor device testing; technology CAD (electronics); 0.25 mum; NMOS; TCAD simulation tools; Taguchi Method; critical electrical parameters; design-of-experiments; device operability; device robust-design; multiple-response optimization technique; multiple-response problems; power consumption; reliability; simulation data; test device; Annealing; Breakdown voltage; Design optimization; Implants; MOS devices; MOSFET circuits; Medical simulation; Robustness; Threshold voltage; US Department of Energy;

fLanguage

English

Publisher

ieee

Conference_Titel

Statistical Metrology, 2000 5th International Workshop on

Conference_Location

Honolulu, HI

Print_ISBN

0-7803-5896-1

Type

conf

DOI

10.1109/IWSTM.2000.869310

Filename

869310