Plasma enhanced chemical vapor deposition ultralow dielectric constant films using triethoxymethylsilane and limonene as precursors

Author

Zi-Jun Ding ; Shi-Jin Ding ; Wei Zhang

Author_Institution

Sch. of Microelectron., Fudan Univ., Shanghai, China

fYear

2014

fDate

28-31 Oct. 2014

Firstpage

1

Lastpage

3

Abstract

Ultralow dielectric-constant (κ) porous SiCO(H) films were prepared using C₇H₁₈O₃Si (MTES) and C₁₀H₁₆ (LIMO) precursors by plasma enhanced chemical vapor deposition (PECVD) and post-deposition annealing. This paper well demonstrated the effect of LIMO/MTES flow rate ratio on the performance of the SiCO(H) film. When the flow rate ratio was 1.5, the SiCO(H) films exhibited the lowest κ value of 2.2 and extremely low leakage current density of 5.3×10^-9 A/cm² at 1 MV/cm, Young´s modulus of 4.23 GPa, and hardness of 0.55 GPa after annealing at 420°C for 4 h in N₂ ambient.

Keywords

Young´s modulus; annealing; current density; hardness; low-k dielectric thin films; permittivity; plasma CVD; porosity; porous materials; silicon compounds; C₁₀H₁₆ precursors; C₇H₁₈O₃Si precursors; LlMO-MTES flow rate ratio; N₂ ambient; PECVD; SiCO(H); Ultralow dielectric-constant porous SiCO(H) films; Young´s modulus; extremely low leakage current density; hardness; limonene; plasma enhanced chemical vapor deposition ultralow dielectric constant films; post-deposition annealing; temperature 420 degC; time 2 h; triethoxymethylsilane; Abstracts; Annealing; Films;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4799-3296-2

Type

conf

DOI

10.1109/ICSICT.2014.7021509

Filename

7021509