Inductorless monolithic microwave amplifiers with directly cascaded cells

Author

Ho, I.E. ; Van Tuyl, R.L.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

fYear

1990

fDate

8-10 May 1990

Firstpage

515

Abstract

The design and performance of inductorless cascadable amplifier cells are described. Using an f/sub T/=15 GHz GaAs FET MMIC (monolithic microwave integrated circuit) process, broadband cells using a new additive gain technique were directly cascaded to form a 26-dB-gain, 80-MHz-4.5-GHz amplifier. A multistage narrowband design exhibited 25-dB gain at 3.5 GHz with a 1.6 GHz bandwidth. A compact FET synthetic inductor is compared to square spiral inductors for these designs.<>

Keywords

III-V semiconductors; MMIC; cascade networks; field effect integrated circuits; gallium arsenide; microwave amplifiers; wideband amplifiers; 1.6 GHz; 25 dB; 80 MHz to 4.5 GHz; FET MMIC; GaAs; SHF; additive gain technique; broadband cells; compact FET synthetic inductor; directly cascaded cells; inductorless cascadable amplifier cells; microwave integrated circuit; monolithic microwave amplifiers; multistage narrowband design; Broadband amplifiers; FET integrated circuits; Field effect MMICs; Gallium arsenide; Inductors; Microwave FET integrated circuits; Microwave amplifiers; Microwave integrated circuits; Microwave theory and techniques; Monolithic integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1990., IEEE MTT-S International

Conference_Location

Dallas, TX

Type

conf

DOI

10.1109/MWSYM.1990.99632

Filename

99632