Title :
Three dimemsional electro-thermal coupled Monte Carlo device simulation
Author :
Xiaoyan Liu ; Kangliang Wei ; Longxiang Yin ; Gang Du ; Hai Jiang ; Kai Zhao ; Lang Zeng ; Xing Zhang
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
3D paralleled electro-thermal coupled full band ensemble MC simulation platform is developed for analysis of local heating effect on performance and reliability of semiconductor devices. This new developed simulation platform provides a powerful tool for thermal-aware device and circuit design of nano scale devices.
Keywords :
Monte Carlo methods; integrated circuit design; semiconductor device reliability; Monte Carlo device simulation; circuit design; full band ensemble MC simulation; local heating effect; nanoscale devices; semiconductor device performance; semiconductor device reliability; thermal-aware device; three dimensional electro-thermal coupled simulation; Conductivity; Heating; Logic gates; Monte Carlo methods; Reliability; Solid modeling; Thermal conductivity;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021520
