DocumentCode
242188
Title
FIB methodologies to analyze buried defects in wafer manufacture process
Author
Yaobin Zhao ; Haibo Dai ; Lee, J.H. ; Zhang, M. ; Yang, May ; Chian, Kary
Author_Institution
Econ.-Technol. Dev. Area, Semicond. Manuf. Int. (Beijing) Corp, Beijing, China
fYear
2014
fDate
28-31 Oct. 2014
Firstpage
1
Lastpage
3
Abstract
Buried defects were hardly analyzed due to invisibility in defect analysis tool - dual beam FIB (Focus Ion Beam) system- before; two methodologies were presented to analyze two types´ buried defects in this paper. One method locate defects by combining defect image and layout analysis, the other method locate defect by nearby visible structure under SEM and OM. Two cases were given to show how the methodologies worked.
Keywords
buried layers; crystal defects; focused ion beam technology; semiconductor technology; FIB methodology; buried defects; defect analysis tool; dual beam FIB system; focus ion beam system; wafer manufacture process; Abstracts; Inspection; Navigation;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location
Guilin
Print_ISBN
978-1-4799-3296-2
Type
conf
DOI
10.1109/ICSICT.2014.7021521
Filename
7021521
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