DocumentCode :
242207
Title :
Influence of substrate on resistive switching behavior of YMnO3 films in bottom-top contact configuration
Author :
Bogusz, Agnieszka ; Blaschke, Daniel ; Skorupa, Ilona ; Scholz, Andrea ; Burger, Danilo ; Schmidt, Oliver G. ; Schmidt, Heidemarie
Author_Institution :
Inst. of Ion-Beam Phys. & Mater. Res., Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany
fYear :
2014
fDate :
28-31 Oct. 2014
Firstpage :
1
Lastpage :
3
Abstract :
The influence of the bottom electrode/substrate on the resistive switching behavior of YMnO3 thin films was investigated. Unipolar resistive switching was observed when Pt/Ti/SiO2/Si and Pt/Al2O3 were employed as a bottom electrode/substrate. YMnO3 deposited on a SrTiO3 doped with Nb exhibits bipolar resistive switching characteristics. It was shown that the use of different substrate materials has got a decisive impact on the YMnO3 microstructure and current-voltage characteristics.
Keywords :
alumina; electrochemical electrodes; elemental semiconductors; memristors; platinum; pulsed laser deposition; semiconductor thin films; silicon; silicon compounds; strontium compounds; titanium; yttrium compounds; Nb:SrTiO3; Pt-Al2O3; Pt-Ti-SiO2-Si; YMnO3; bipolar resistive switching characteristics; bottom electrode-substrate; bottom-top contact configuration; current-voltage characteristics; memristive devices; microstructure; nonvolatile RS; pulsed laser deposition; resistive switching behavior; substrate materials; thin films; Abstracts; Cryptography; Substrates; Temperature distribution; X-ray scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
Type :
conf
DOI :
10.1109/ICSICT.2014.7021530
Filename :
7021530
Link To Document :
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