Design of a new voltage-controlled magnetic memory

Magnetic memory stores data by magnetic state. It provides non-volatility, fast write/read speed and infinite endurance. Currently, the data-writing approach for magnetic memory is based on the spin transfer torque effect. However, a relatively large current is needed to change the magnetic state, which would cause high power dissipation and poor scaling performance. The solution to relieve these problems is a new data-writing approach based on voltage control. A new structure of this approach with higher storage density and better energy efficiency for the magnetic memory is studied, which makes it a strong competitor among the non-volatile memories.