• DocumentCode
    2422152
  • Title

    The Effects of Substrate Mounds and Pits on the Periodicity of Cross-Hatch Surface and Subsequent Formation of Quantum Dots

  • Author

    Thet, Cho Cho ; Kanjanachuchai, Songphol ; Panyakeow, Somsak

  • Author_Institution
    Dept. of Electr. Eng., Chulalongkorn Univ., Bangkok
  • fYear
    2007
  • fDate
    16-19 Jan. 2007
  • Firstpage
    1141
  • Lastpage
    1144
  • Abstract
    Self assembled InAs QDs on cross-hatch virtual substrate (VS) consisting of 50-nm-thick InxGa1-xAs/GaAs(001) are grown. The periodicity of cross-hatch patterns are collapsed due to the formation of substrate mounds and pits during pre-heat GaAs substrate. The subsequent growth of QDs on the deformed cross-hatch surface is studied by atomic force microscopy (AFM).
  • Keywords
    III-V semiconductors; atomic force microscopy; indium compounds; semiconductor growth; semiconductor quantum dots; InAs quantum dots; InGaAs-GaAs; atomic force microscopy; cross hatch surface; cross hatch virtual substrate; periodicity; substrate mounds; substrate pits; Atomic force microscopy; Epitaxial layers; Gallium arsenide; Quantum computing; Quantum dots; Substrates; Surface morphology; Surface reconstruction; Systems engineering and theory; Temperature; Atomic Force Microscopy; Cross-hatch Virtual Substrate; InAs Quantum Dots; Substrate Pits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano/Micro Engineered and Molecular Systems, 2007. NEMS '07. 2nd IEEE International Conference on
  • Conference_Location
    Bangkok
  • Print_ISBN
    1-4244-0610-2
  • Type

    conf

  • DOI
    10.1109/NEMS.2007.352219
  • Filename
    4160522
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2422152