Title :
High Efficiency Quantum Dot Molecule Solar Cells for High Concentration Sunlight Application
Author :
Panyakeow, Somsak
Author_Institution :
Electrical Engineering Department, Faculty of Engineering, Chulalongkorn University as a lecturer.
Abstract :
InAs quantum dot molecule (QDM) solar cells are fabricated by modified molecular beam epitaxy technique. With multi-stacks and high dot density greater than 1012 cm-2, a QDM solar cell with hetero-structure provides high conversion efficiency of 25.9 % under 100 mW/cm2 AMI solar simulator. The improved efficiency of this novel nanostructure solar cell is due to the extension of solar response to long wavelength region beyond the band edge of GaAs, which is used as the substrate for the hetero-structure of AlGaAs/GaAs having InAs quantum dot molecules as the active part of the solar cells. It is also found that QDM solar cells perform better at high concentration sunlight due to the low dimensionality of quantum dot structure.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor quantum dots; solar cells; AlGaAs-GaAs; InAs; high concentration sunlight application; modified molecular beam epitaxy; quantum dot molecule; solar cells; Absorption; Energy conversion; Gallium arsenide; Lattices; Molecular beam epitaxial growth; Photovoltaic cells; Photovoltaic systems; Quantum dots; Solar power generation; Sun; High Concentrator Solar Cells; InAs Quantum Dot Molecule Solar Cells;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems, 2007. NEMS '07. 2nd IEEE International Conference on
Conference_Location :
Bangkok
Print_ISBN :
1-4244-0610-2
DOI :
10.1109/NEMS.2007.352220