Full-printed OTFT modeling: Impacts of process variation

Author

Sankhare, M.A. ; Guerin, M. ; Bergeret, E. ; Pannier, P. ; Coppard, R.

Author_Institution

IM2NP, IMT-Technopole de Chateau-Gombert, Marseille, France

fYear

2014

fDate

28-31 Oct. 2014

Firstpage

1

Lastpage

3

Abstract

In this work, the modeling of organic thin film transistors (OTFT) is presented. The transistors were manufactured with a full printed technique and the modeling was done using the A-Si: H TFT model. Once the extraction procedure validated, the extraction was performed on a sample of OTFTs. This permits to obtain the scattering of each parameter. This dispersion correlated to ideal statistic function permitted to carry out some Monte-Carlo simulations and then to reach a better modeling of different circuits. The simulated results show a good matching with measurements performed on organic current mirrors.

Keywords

Monte Carlo methods; amorphous semiconductors; hydrogen; organic semiconductors; semiconductor device models; silicon; thin film transistors; A-Si:H TFT model; Monte-Carlo simulations; OTFT; Si:H; dispersion; extraction procedure; full printed technique; ideal statistic function; organic current mirrors; organic thin film transistors; Current measurement; Dispersion; Integrated circuit modeling; Mirrors; Monte Carlo methods; Organic thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4799-3296-2

Type

conf

DOI

10.1109/ICSICT.2014.7021536

Filename

7021536