Title :
Ultralow specific on-resistance trench lateral power MOSFETs
Author :
Xiaorong Luo ; Kun Zhou ; Zhaoji Li ; Bo Zhang
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Device, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
Optimizing the trade-off relationship between the off-state breakdown voltage (BV) and specific on-resistance (Ron,sp) is the main concern for power MOSFETs. For lateral power MOSFETs, the trench technology exhibits significant improvements in the BV and Ron,sp by reducing the device pitch and increasing the channel density, and thus improves the tradeoff between BV and Ron,sp. This paper presents novel trench-type lateral power MOSFETs and their operation mechanisms proposed by Power Integrated Technology Lab.
Keywords :
electric breakdown; isolation technology; optimisation; power MOSFET; Power Integrated Technology Lab; breakdown voltage; channel density; device pitch; lateral power MOSFET; on-resistance trench; trench technology; Doping; Electric fields; Logic gates; MOSFET; Silicon; Silicon-on-insulator;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021537
