A superjunction snapback-free reverse-conducting insulated gate bipolar transistor with anti-parallel p-i-n diode

A superjunction reverse-conducting IGBT (SJ-RC-IGBT) with anti-parallel p-i-n diode is proposed in this paper. By introducing an additional trench oxide between the P anode and N anode, the proposed structure performes just like the conventional IGBT in forward conduction. Numerical simulations show that the elimination of snapback can be realized in a single cell whose pitch is less than 10 μm. The superjunction structure is introduced to reduce the on-state forward voltage (Von) at a given blocking voltage level. In addition, a better trade-off between the turn-off loss (E_off) and Von is achieved in the proposed RC-IGBT than the conventional RC-IGBT(C-RC-IGBT).