High current gain 4H-SiC BJT for limiting surface states effect

Author

ChengChun Sun ; YouRun Zhang ; Xiaochuan Deng ; Bo Zhang

Author_Institution

State Key Lab. of Electron. Thin film & Integrated Device, Univ. of Electron., Chengdu, China

fYear

2014

fDate

28-31 Oct. 2014

Firstpage

1

Lastpage

3

Abstract

In this paper, a novel 4H-SiC BJT is proposed to obtain a high current gain by separating electron and hole near the SiC/SiO2 surface. It is effective to improve the current gain by extending the emitter metal to overlap the passivation layer on the extrinsic base which modulates the surface potential. Compared with the conventional BJTs, the surface recombination rate decreases and the current gain improves by 63.2% with the compatible process technology. The optimized size is oxide layer thickness in the order of 50 nm and overlapping metal length in the order of 4 μm.

Keywords

bipolar transistors; passivation; silicon compounds; surface potential; surface recombination; surface states; wide band gap semiconductors; 4H-SiC BJT; SiC-SiO2 surface; SiC-SiO₂; current gain; emitter metal; extrinsic base; limiting surface states effect; oxide layer thickness; passivation layer; size 4 mum; size 50 nm; surface potential; surface recombination rate; Abstracts; Annealing; Doping; Epitaxial growth; Limiting; Silicon carbide; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4799-3296-2

Type

conf

DOI

10.1109/ICSICT.2014.7021542

Filename

7021542