University facilities and safety considerations for LPCVD and ion implantation

Author

Blondell, S.P. ; Fuller, L.F. ; Runkle, G.A. ; Pearson, R.E.

Author_Institution

Dept. of Microelectron. Eng., Rochester Inst. of Technol., NY, USA

fYear

1989

fDate

12-14 Jun 1989

Firstpage

112

Lastpage

117

Abstract

The development of a comprehensive safety policy connected with the introduction of low-pressure chemical vapor deposition (LPCVD) and ion implantation at the Center for Microelectronics Engineering at RIT (Rochester Institute of Technology) is described. The scope of this safety policy includes equipment and facilities requirements, operational procedures, and personnel training. Such a plan must be coordinated with local emergency response teams and the RIT Office of Campus Safety. In addition, it must also meet the requirements of the Occupational Safety and Health Act, the Environmental Protection Agency, and state and local authorities

Keywords

chemical vapour deposition; integrated circuit technology; ion implantation; safety; Environmental Protection Agency; LPCVD; RIT; Rochester Institute of Technology; emergency response teams; facilities requirements; ion implantation; low-pressure chemical vapor deposition; personnel training; safety considerations; safety policy; Chemical technology; Chemical vapor deposition; Ion implantation; Local government; Microelectronics; Occupational safety; Personnel; Protection; Railway safety; Safety devices;

fLanguage

English

Publisher

ieee

Conference_Titel

University/Government/Industry Microelectronics Symposium, 1989. Proceedings., Eighth

Conference_Location

Westborough, MA

ISSN

0749-6877

Type

conf

DOI

10.1109/UGIM.1989.37316

Filename

37316