DocumentCode
2422686
Title
Investigation of Intrinsic Stress Effects in Cantilever Structures
Author
Hollauer, Ch. ; Ceric, H. ; van Barel, G. ; Witvrouw, A. ; Selberherr, S.
Author_Institution
Inst. for Microelectron., Vienna Univ. of Technol.
fYear
2007
fDate
16-19 Jan. 2007
Firstpage
151
Lastpage
154
Abstract
We present a method for the prediction of intrinsic stress in poly-SiGe thin films. The simulation of intrinsic stress effects in deposited thin film is an important issue, especially for the cantilever fabrication, because after removal of the sacrificial layer the intrinsic stress leads to an undesirable and uncontrolled deflection of the cantilever. The developed methodology to treat thin film stress is applied to analyze fabricated cantilever structures and the simulation results are compared with experiments.
Keywords
Ge-Si alloys; cantilevers; micromechanical devices; stress effects; SiGe; cantilever structures; intrinsic stress effects; thin film stress; CMOS process; Capacitive sensors; Fabrication; Germanium silicon alloys; Micromechanical devices; Microstructure; Silicon germanium; Sputtering; Stress; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano/Micro Engineered and Molecular Systems, 2007. NEMS '07. 2nd IEEE International Conference on
Conference_Location
Bangkok
Print_ISBN
1-4244-0610-2
Type
conf
DOI
10.1109/NEMS.2007.352250
Filename
4160553
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