Title :
Investigation of Intrinsic Stress Effects in Cantilever Structures
Author :
Hollauer, Ch. ; Ceric, H. ; van Barel, G. ; Witvrouw, A. ; Selberherr, S.
Author_Institution :
Inst. for Microelectron., Vienna Univ. of Technol.
Abstract :
We present a method for the prediction of intrinsic stress in poly-SiGe thin films. The simulation of intrinsic stress effects in deposited thin film is an important issue, especially for the cantilever fabrication, because after removal of the sacrificial layer the intrinsic stress leads to an undesirable and uncontrolled deflection of the cantilever. The developed methodology to treat thin film stress is applied to analyze fabricated cantilever structures and the simulation results are compared with experiments.
Keywords :
Ge-Si alloys; cantilevers; micromechanical devices; stress effects; SiGe; cantilever structures; intrinsic stress effects; thin film stress; CMOS process; Capacitive sensors; Fabrication; Germanium silicon alloys; Micromechanical devices; Microstructure; Silicon germanium; Sputtering; Stress; Temperature;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems, 2007. NEMS '07. 2nd IEEE International Conference on
Conference_Location :
Bangkok
Print_ISBN :
1-4244-0610-2
DOI :
10.1109/NEMS.2007.352250
