Modeling the heterojunction bipolar transistor for integrated circuit simulation

Author

Liou, J.J. ; Drafts, W. ; Yuan, J.S.

Author_Institution

Dept. of Electr. Eng., Central Florida Univ., Orlando, FL, USA

fYear

1989

fDate

12-14 Jun 1989

Firstpage

219

Lastpage

222

Abstract

Based on the concept of the conventional Gummel-Poon model for Si homojunction bipolar transistors, a comprehensive physics-based large signal heterojunction bipolar transistor (HBT) model is developed for integrated-circuit simulation. The model can be implemented directly into circuit simulators such as SPICE. Heterojunction effects as well as physical properties of III-V compound materials are included. A small-signal heterojunction bipolar transistor model can be readily derived by linearizing the circuit elements in the model developed

Keywords

bipolar integrated circuits; circuit analysis computing; heterojunction bipolar transistors; semiconductor device models; Gummel-Poon model; HBT model; III-V compound materials; SPICE; circuit simulators; heterojunction bipolar transistor; heterojunction effects; integrated circuit simulation; large signal model; small signal model; Bipolar integrated circuits; Bipolar transistors; Capacitance; Electrons; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit modeling; SPICE; Silicon; Thermionic emission;

fLanguage

English

Publisher

ieee

Conference_Titel

University/Government/Industry Microelectronics Symposium, 1989. Proceedings., Eighth

Conference_Location

Westborough, MA

ISSN

0749-6877

Type

conf

DOI

10.1109/UGIM.1989.37339

Filename

37339