Title :
NEMS Devices for Accelerometers Compatible with Thin SOI Technology
Author :
Oiller, E. ; Duraffourg, L. ; Delaye, MT ; Grange, H. ; Deneuville, S. ; Bernos, J. ; Dianoux, R. ; Marchi, F. ; Renaud, D. ; Baron, T. ; Andreucci, P. ; Robert, P.
Author_Institution :
CEA/LETI, Grenoble
Abstract :
The paper presents thin SOI NEMS structures for accelerometers based on thin SOI technology and compatible with "in-IC" integration. Modeling of Casimir force, design of accelerometers, improvement of hybrid e-beam/DUV lithography and FH-vapor release, development of specific AFM characterizations have allowed to fabricate NEMS devices and to provide AFM characterizations.
Keywords :
Casimir effect; accelerometers; atomic force microscopy; electron beam lithography; microsensors; ultraviolet lithography; AFM; Casimir force modeling; FH-vapor release; IC integration; NEMS devices; accelerometers design; hybrid e-beam/DUV lithography; thin SOI technology; Accelerometers; CMOS technology; Costs; Delay; Micromechanical devices; Nanoelectromechanical systems; Nanoscale devices; Paper technology; Resonance; Silicon; NEMS; SOI; accelerometer; integration;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems, 2007. NEMS '07. 2nd IEEE International Conference on
Conference_Location :
Bangkok
Print_ISBN :
1-4244-0610-2
DOI :
10.1109/NEMS.2007.352257
