Title :
High-speed, low-noise avalanche photodiodes
Author :
Campbell, J.C. ; Nie, H. ; Lenox, C. ; Kinsey, G. ; Yuan, P. ; Holmes, A.L., Jr. ; Streetman, B.G.
Author_Institution :
Texas Univ., Austin, TX, USA
Abstract :
A resonant InAlAs-InGaAs avalanche photodiode (APD) that operates at 1 to 1.5 mm has achieved very low noise (k equivalent to 0.18), unity-gain bandwidth of 24 GHz, and a gain-bandwidth-product of 290 GHz.
Keywords :
III-V semiconductors; aluminum compounds; avalanche photodiodes; gallium arsenide; indium compounds; optical noise; optical receivers; 1 to 1.5 mm; 24 GHz; InAlAs-InGaAs; gain-bandwidth-product; high-speed low-noise avalanche photodiodes; resonant InAlAs-InGaAs avalanche photodiode; unity-gain bandwidth; very low noise; Absorption; Avalanche photodiodes; Bandwidth; Bit rate; Fabry-Perot; Indium phosphide; Noise figure; Optical receivers; Optical waveguides; Resonance;
Conference_Titel :
Optical Fiber Communication Conference, 2000
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-630-3
DOI :
10.1109/OFC.2000.869432
