High-speed InGaAsP electroabsorption modulators: dependence of the device characteristics on the mesa design

Author

Shtengel, G.E. ; Bond, A.E. ; Akulova, Y.A. ; Reynolds, C.L.

Author_Institution

Lucent Technol. Bell Labs., Breinigsville, PA, USA

Volume

4

fYear

2000

fDate

7-10 March 2000

Firstpage

120

Abstract

We present characteristics of InGaAsP electroabsorption modulators with variable length and mesa width. We demonstrate devices with return loss below -10 dB, bandwidth above 40 GHz and extinction ratio of 10 dB/2 V. We show that low capacitance is advantageous for high-speed operation even when achieved at the expense of increased series resistance.

Keywords

III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; optical losses; optical planar waveguides; 10 dB; 40 GHz; InGaAsP; InGaAsP electroabsorption modulators; bandwidth; capacitance; device characteristics; extinction ratio; high-speed electroabsorption modulators; high-speed operation; mesa design; mesa width; return loss; series resistance; variable length; Bandwidth; Contacts; Electronic mail; Etching; Extinction ratio; Optical waveguides; Parasitic capacitance; Polyimides; Quantum capacitance; Quantum well devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Fiber Communication Conference, 2000

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-630-3

Type

conf

DOI

10.1109/OFC.2000.869434

Filename

869434