InP-based pin TWA photoreceivers with low group delay scatter over 40 GHz bandwidth

Author

Bach, H.-G. ; Schlaak, W. ; Mekonnen, G.G. ; Seeger, A. ; Steingruber, R. ; Schramm, C. ; Jacumeit, G. ; Ziegler, R. ; Umbach, A. ; Unterborsch, G. ; Passenberg, W. ; Ebert, W. ; Eckardt, Th.

Author_Institution

Heinrich-Hertz-Inst. fur Nachrichtentech. Berlin GmbH, Germany

Volume

4

fYear

2000

fDate

7-10 March 2000

Firstpage

123

Abstract

Advanced 40 Gb/s photoreceiver OEICs, packaged into thermo-stable modules, were developed for 1.55 micron TDM applications. The OEIC comprises a waveguide-integrated photodiode and a traveling wave amplifier with a group delay scatter |/spl plusmn/7 ps| up to 45 GHz.

Keywords

HEMT integrated circuits; III-V semiconductors; delays; indium compounds; integrated circuit packaging; integrated optoelectronics; light scattering; modules; optical receivers; p-i-n photodiodes; 40 GHz; 40 Gbit/s; GHz bandwidth; Gb/s photoreceiver OEICs; InP; InP-based pin TWA photoreceivers; TDM applications; group delay scatter; low group delay scatter; thermo-stable module packaging; traveling wave amplifier; waveguide-integrated photodiode; Bandwidth; Delay; Frequency; HEMTs; Linearity; Optical amplifiers; Optical mixing; Optical scattering; Optical waveguides; Optoelectronic devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Fiber Communication Conference, 2000

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-630-3

Type

conf

DOI

10.1109/OFC.2000.869435

Filename

869435