Title :
High-performance, manufacturable avalanche photodiodes for 10 Gb/s optical receivers
Author :
Itzler, Mark A. ; Suzanne, K.K.L. ; McCoy, S. ; Codd, N.
Author_Institution :
EPITAXX Inc., West Trenton, NJ, USA
Abstract :
We describe an InGaAs-InP avalanche photodiode employing a shaped diffusion profile and floating guard rings. High gain-bandwidth products (85 to 95 GHz), 10 GHz peak bandwidths, high gains (50 to 100), and good gain uniformity (/spl plusmn/4%) are demonstrated.
Keywords :
III-V semiconductors; avalanche photodiodes; diffusion; gallium arsenide; indium compounds; optical receivers; photodetectors; 10 GHz; 10 Gbit/s; GHz peak bandwidths; Gb/s optical receivers; InGaAs-InP; InGaAs-InP avalanche photodiode; floating guard rings; good gain uniformity; high gain-bandwidth products; high gains; high-performance manufacturable avalanche photodiodes; shaped diffusion profile; Absorption; Avalanche photodiodes; Bandwidth; Bit rate; Dynamic range; Electric breakdown; Indium phosphide; Manufacturing; Optical receivers; Zinc;
Conference_Titel :
Optical Fiber Communication Conference, 2000
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-630-3
DOI :
10.1109/OFC.2000.869436
