A Novel Half-Adder Using Single Electron Tunneling Technology

Single electron tunneling (SET) technology introduces more potential for feature size reduction compared with well-established silicon-based CMOS technology. The SET technology offers the ability to control the motion of individual electrons in the designed circuits. In this paper, some of the basic single electron circuits (SEC) found in the literature is reviewed. The schematic diagrams of these basic SEC (inc. detailed parameters for all used devices) along with the corresponding simulation results (using SIMON 2.0) of these SEC are included. Finally, a novel XOR SEC, with detailed schematic and simulation results, is presented. The developed XOR can be used as a half-adder SET circuit.