Losses in GaAs microstrip

Author

Goldfarb, M.E. ; Platzker, A.

Author_Institution

Raytheon Co., Lexington, MA, USA

fYear

1990

fDate

8-10 May 1990

Firstpage

563

Abstract

Data on the losses associated with microstrip transmission lines with impedances from approximately 20 to 90 Omega at frequencies up to 40 GHz for structures fabricated on 100- mu m ( mu -mil) GaAs are presented. The data were taken from transmission measurements of lightly coupled, multiple half-wavelength resonators. A comparison of the loss data with the predicted losses from three popular CAE tools is provided. The loss models agree fairly well with measured data through 40 GHz. Since the measured loss roughly follows a square-law frequency relationship through 20 GHz, it should be possible to adjust the loss below this frequency and above 1 GHz by modifying the resistivity of the conductor in the simulator.<>

Keywords

III-V semiconductors; gallium arsenide; loss measurement; microwave measurement; resonators; strip line components; strip lines; 1 to 40 GHz; 20 to 90 ohm; CAE; GaAs; III-V semiconductors; loss models; losses; microstrip transmission lines; multiple half-wavelength resonators; square-law frequency relationship; Computer aided engineering; Conductivity; Frequency measurement; Gallium arsenide; Impedance; Loss measurement; Microstrip; Optical coupling; Propagation losses; Transmission line measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1990., IEEE MTT-S International

Conference_Location

Dallas, TX

Type

conf

DOI

10.1109/MWSYM.1990.99643

Filename

99643