Title :
RF WIDE-band amplifier multichip module
Author :
Xiubo Liu ; Hongjiang Wu
Author_Institution :
Heibei Semicond. Res. Inst., Shijiazhuang, China
Abstract :
In this paper, a numerical control gain wideband (from 2GHz to 18GHz) amplifier module based on monolithic microwave integrated circuit is presented. In order to reduce the input and output return loss, get smooth curve of gain and improve the transmission performance, therefor, the structure and matching network is an essential issue in the design of the module. On the basis of this, the module includes power equalize, numerical control attenuator, three low noise amplifiers and two switches. The work is focus on getting smooth curve of the gain and optimizing the structure of the multichip module. The measurement results show that this module has no less than 27 dB small signal gain,the smooth curve of gain is about ±2 dB and low VSWR better than 1.6 over the operating frequency range from 2GHz to 18GHz.
Keywords :
MMIC amplifiers; UHF amplifiers; UHF integrated circuits; multichip modules; numerical control; wideband amplifiers; RF wideband amplifier multichip module; VSWR; frequency 2 GHz to 18 GHz; gain smooth curve; input return loss; low noise amplifiers; matching network; monolithic microwave integrated circuit; multichip module; numerical control attenuator; numerical control gain wideband amplifier module; output return loss; power equalize; small signal gain; switches; Abstracts; Epitaxial growth; Gallium arsenide; HEMTs; Radio frequency; Switches;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021605