Ionizing radiation effects in EPF10K50E and XC2S150 programmable logic devices

Author

Gingrich, D.M. ; Buchanan, N.J. ; Chen, L. ; Liu, S.

Author_Institution

Centre for Subatomic Res., Alberta Univ., Edmonton, Alta., Canada

fYear

2002

fDate

2002

Firstpage

41

Lastpage

44

Abstract

We have measured the effects of total ionizing dose in Altera FLEX 10K50E embedded programmable logic devices and Xilinx Spartan-II 150 field program gate arrays. The devices were irradiated with X-rays at a dose rate of about 12 cGy(SiO₂)/s. An average total dose of 830 Gy(SiO₂) was absorbed by the FLEX 10KE and 330 Gy(SiO₂) by the Spartan-II before the power supply current increased.

Keywords

X-ray effects; field programmable gate arrays; integrated circuit reliability; integrated circuit testing; logic testing; programmable logic devices; 330 Gy; 830 Gy; Altera FLEX 10K50E embedded programmable logic devices; EPF10K50E programmable logic devices; FPGA; SiO₂-Si; X-ray irradiation; XC2S150 programmable logic devices; Xilinx Spartan-II 150 field program gate arrays; average total dose; dose rate; ionizing radiation effects; power supply current; CMOS logic circuits; Field programmable gate arrays; Ionizing radiation; Logic arrays; Logic devices; Pipelines; Programmable logic arrays; Programmable logic devices; Registers; X-rays;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation Effects Data Workshop, 2002 IEEE

Print_ISBN

0-7803-7544-0

Type

conf

DOI

10.1109/REDW.2002.1045530

Filename

1045530