DocumentCode
2423753
Title
Single event effects and prompt dose hardness of a deep submicron commercial process
Author
Benedetto, Joseph M.
Author_Institution
Aeroflex UTMC, Colorado Springs, CO, USA
fYear
2002
fDate
2002
Firstpage
58
Lastpage
61
Abstract
A single event effects and prompt dose hardened 0.25 μm CMOS process has been developed using the WaferTech commercial foundry. The hardness was achieved solely using design-hardening techniques, i.e. no process changes were added or removed from the commercial flow.
Keywords
CMOS integrated circuits; integrated circuit design; integrated circuit testing; production testing; radiation hardening (electronics); 0.25 micron; WaferTech commercial foundry; commercial flow; commercial process; design-hardening techniques; prompt dose hardened CMOS process; prompt dose hardness; single event effects hardness; Application specific integrated circuits; CMOS process; Fabrication; Flip-flops; Foundries; Minimally invasive surgery; Radiation effects; Radiation hardening; Single event upset; Springs;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation Effects Data Workshop, 2002 IEEE
Print_ISBN
0-7803-7544-0
Type
conf
DOI
10.1109/REDW.2002.1045533
Filename
1045533
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