Title :
SEE and TID of emerging non-volatile memories
Author :
Nguyen, D.N. ; Scheick, L.Z.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
We report on the SEE and TID (total ionizing dose) tests of higher density flash memories. Stand-by currents and functionality tests were used to characterize the response to radiation effects. Single event functional interrupt (SEFI) errors were observed indicating upsets from complex control circuitry.
Keywords :
electric current; error analysis; flash memories; integrated circuit reliability; integrated circuit testing; integrated memory circuits; radiation effects; SEE tests; SEFI errors; TID tests; control circuitry upsets; functionality tests; high density flash memory; nonvolatile memories; radiation effects response; single event functional interrupt errors; stand-by currents; total ionizing dose tests; Charge pumps; Circuit testing; Flash memory; Logic arrays; Nonvolatile memory; Packaging; Redundancy; Solid state circuits; Space missions; Writing;
Conference_Titel :
Radiation Effects Data Workshop, 2002 IEEE
Print_ISBN :
0-7803-7544-0
DOI :
10.1109/REDW.2002.1045534
