Impact of stress time of program operation on the endurance performance

In this paper, for the first time, we have studied the effect of various pulse program conditions on the endurance performance of resistive random access memory (RRAM), based on a novel pulse measurement method. When the width of program or SET pulse increases while the pulse height remains constant, the resistance of the low resistance state (LRS) decreases first and then increases. Similarly, when a measurement is carried out by a DC sweeping method, an identical trend can be found. Under different DC program conditions, as the compliance current is reached, the current that flows through the device always maintains at the value of the compliance current, and the stress time is just controlled by changing stop voltage (V_stop) in DC sweeping. By revealing the relationship between the LRS resistance and the stress time of pulse or DC operation, we found that the endurance performance of the bipolar valence change mechanism (VCM) device can be improved by selecting the appropriate pulse width.