Trivalent ion-doping effect in TiO2-based resistive switching memory

Author

Baiwen Zeng ; Dinglin Xu ; Yuzhou Zhou ; Minghua Tang

Author_Institution

Key Lab. of Low Dimensional Mater. & Applic. Technol. of Minist. of Educ., Xiangtan Univ., Xiangtan, China

fYear

2014

fDate

28-31 Oct. 2014

Firstpage

1

Lastpage

3

Abstract

Trivalent metal ions (Al and Cr) were doped into a solution-synthesized TiO₂ film, and the corresponding resistive switching characteristics were investigated in relation to the oxygen vacancies and chemical composition. In contrast to the pure TiO₂ sample, the doped samples exhibited a better switching uniformity and a lower set voltage (V_set), which was attributed to the enhanced oxygen vacancy generation. Based on these results, the doping effects can be controlled in a continuous manner by selecting dopants based on the valence state of doped ions.

Keywords

CMOS memory circuits; aluminium; chromium; integrated circuit manufacture; oxygen; resistive RAM; semiconductor doping; switching circuits; titanium compounds; Al; Cr; TiO₂; chemical composition; oxygen vacancy generation; resistive switching memory; trivalent ion-doping effect; trivalent metal ions; Abstracts; Annealing; Artificial intelligence; Metals; Silicon; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4799-3296-2

Type

conf

DOI

10.1109/ICSICT.2014.7021621

Filename

7021621