DocumentCode
242396
Title
Design and implementation of fefet-based lookup table
Author
Kai Li ; Ying Xiong ; Minghua Tang ; Ya Qin ; Zheng Li ; Yichun Zhou
Author_Institution
Key Lab. of Low Dimensional Mater. & Applic. Technol. of Minist. of Educ., Xiangtan Univ., Xiangtan, China
fYear
2014
fDate
28-31 Oct. 2014
Firstpage
1
Lastpage
3
Abstract
Ferroelectric random access memory (FeRAM) is a promising candidate to substitute static random access memory (SRAM) in lookup table (LUT) design due to its high density, high speed operation, anti-radiation and non-volatility. Ferroelectric gate field effect transistors (FeFETs) have been extensively studied and its usage in memory elements and basic analog circuit configurations has gained much interests. Here, we propose a novel architecture of FeFET-based LUT. An improved timing mode of FeRAM chip is analyzed to satisfy the performance of the FeFET-based LUT. Decoder, driver circuit and sensitive amplifier for FeFET array are also proposed. Every design process is simulated by Sentarus TCAD. All the simulation results show that the proposed LUT works properly when the frequency reaches 500 MHz at 0.3 V differential input.
Keywords
ferroelectric storage; field effect transistors; table lookup; FeFET-based LUT; FeRAM; LUT design; SRAM; Sentarus TCAD; basic analog circuit configurations; decoder; driver circuit; ferroelectric gate field effect transistors; ferroelectric random access memory; frequency 500 MHz; improved timing mode; lookup table design; memory elements; sensitive amplifier; static random access memory; voltage 0.3 V; Abstracts; Logic gates; Reliability;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location
Guilin
Print_ISBN
978-1-4799-3296-2
Type
conf
DOI
10.1109/ICSICT.2014.7021623
Filename
7021623
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