Title :
Proton response of low-frequency noise in 0.20 μm 90 GHz fT UHV/CVD SiGe HBTs
Author :
Jin, Zhenrong ; Cressler, John D. ; Niu, Guofu ; Marshall, Paul W. ; Kim, Hak S. ; Reed, Robert ; Joseph, Alvin J.
Author_Institution :
Electr. & Comput. Eng. Dept., Auburn Univ., AL, USA
Abstract :
The influence of proton exposure on the low-frequency noise of 0.20 μm UHV/CVD SiGe HBTs is presented for the first time. The noise degradation after irradiation shows a strong dependence on transistor geometry. Our previous noise theory is used to understand this behavior, and a comparison is made between these new results on third generation SiGe technology and our prior results on first generation SiGe technology.
Keywords :
1/f noise; BiCMOS integrated circuits; Ge-Si alloys; chemical vapour deposition; heterojunction bipolar transistors; millimetre wave bipolar transistors; proton effects; semiconductor device noise; semiconductor device reliability; semiconductor device testing; semiconductor materials; 0.20 micron; 1/f noise proton radiation response; 90 GHz; Si; Si CMOS transistors; SiGe; SiGe HBT; SiGe HBT BiCMOS technology; SiGe technology; UHV/CVD; irradiation induced noise degradation; low-frequency noise; proton exposure influence; transistor geometry; BiCMOS integrated circuits; CMOS technology; Degradation; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Low-frequency noise; Noise generators; Protons; Silicon germanium;
Conference_Titel :
Radiation Effects Data Workshop, 2002 IEEE
Print_ISBN :
0-7803-7544-0
DOI :
10.1109/REDW.2002.1045542
