DocumentCode
2423983
Title
Total dose bias dependency and ELDRS effects in bipolar linear devices
Author
Yui, C.C. ; McClure, S.S. ; Rax, B.G. ; Lehman, J.M. ; Minto, T.D. ; Wiedeman, M.D.
Author_Institution
Jet Propulsion Lab., Electron. Parts Eng. Office, Pasadena, CA, USA
fYear
2002
fDate
2002
Firstpage
131
Lastpage
137
Abstract
Total dose tests of several bipolar linear devices show sensitivity to both dose rate and bias during exposure. All devices exhibited enhanced low dose rate sensitivity (ELDRS). An accelerated ELDRS test method for three different devices demonstrates results similar to tests at low dose rate. Behavior and critical parameters from these tests are compared and discussed.
Keywords
bipolar analogue integrated circuits; integrated circuit reliability; integrated circuit testing; life testing; radiation effects; ELDRS effects; accelerated ELDRS test method; bias sensitivity; bipolar linear devices; critical test parameters; dose rate sensitivity; enhanced low dose rate sensitivity; total dose bias dependency; total dose tests; Automatic testing; Circuit testing; Electronics packaging; Laboratories; Military aircraft; Propulsion; System testing; Temperature; Transducers; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation Effects Data Workshop, 2002 IEEE
Print_ISBN
0-7803-7544-0
Type
conf
DOI
10.1109/REDW.2002.1045543
Filename
1045543
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