A novel finfet-based 1T-dram with extended body using gate-induced drain leakage mechanism

In this paper, an extended body FinFET structure to be applied for capacitorless dynamic random access memory is proposed, which is called EB-FinFET. We used Gate-induced Drain Leakage (GIDL) mechanism to investigate and analyze how extended body height affects the programming window and retention time through the three-dimensional (3-D) numerical simulation. EB-FinFET has a firm structure, acceptable gate controllability, a higher drain current, a larger programming window, and a longer retention time in terms of simulation results. Moreover, using the operation mechanism of GIDL can obtain a deeper concentration of holes than the impact ionization mechanism demonstrated. Eventually, we believe that EB-FinFET could be the most promising structure for embedded-DRAM.