Title :
Updated responses of devices from the FSG and FSP radiation-hardened power MOSFET families to 1-MeV equivalent neutrons
Author :
Gillberg, James E. ; Titus, Jeffrey L. ; Hubbard, Noel ; Burton, Donald I. ; Wheatley, C. Frank
Author_Institution :
Fairchild Semicond., Somerville, MA, USA
Abstract :
This paper updates our 2001 workshop paper and provides neutron test results of six device types representing the Star Power Gold, FSG, and the Star Power, FSP, radiation-hardened power MOSFET families manufactured by Fairchild Semiconductor. Both the FSG and FSP families employ a stripe-cell topology with devices having rated drain breakdown voltages from 30 volts to 250 volts.
Keywords :
neutron effects; power MOSFET; radiation hardening (electronics); semiconductor device breakdown; semiconductor device testing; 30 to 250 V; Star Power FSP power MOSFET; Star Power Gold FSG power MOSFET; neutron responses; neutron test; radiation-hardened power MOSFET; rated drain breakdown voltages; stripe-cell topology; Cranes; Gold; Ionization; MOSFET circuits; Neutrons; Power MOSFET; Radiation hardening; Semiconductor device manufacture; Semiconductor device testing; USA Councils;
Conference_Titel :
Radiation Effects Data Workshop, 2002 IEEE
Print_ISBN :
0-7803-7544-0
DOI :
10.1109/REDW.2002.1045544
