• DocumentCode
    242412
  • Title

    The hetero material gateand hetero-junction tunnel field-effect transistor with pocket

  • Author

    Zhi Jiang ; Yiqi Zhuang ; Cong Li ; Wang Ping

  • Author_Institution
    Sch. of Microelectron., Xidian Univ., Xi´an, China
  • fYear
    2014
  • fDate
    28-31 Oct. 2014
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    In this paper, the hetero material gate and hetero-junction tunnel field-effect (HMG HJ-TFET) with pocket was studied. Improvements in the device performance in terms of on-state current were shown. It is found that a good saturation of IDS is observed. The substhreshld swing (SS) performance was improved. The hetero-junction was formed by the SiGe material in source region, the on-state current (ION) was also increased.
  • Keywords
    junction gate field effect transistors; silicon compounds; tunnel transistors; HMG HJ-TFET; SS performance improvement; SiGe; device performance; heterojunction tunnel field-effect transistor; heteromaterial gate; on-state current; pocket; source region; substhreshld swing performance improvement; Abstracts; Doping; Hafnium compounds; Logic gates; Performance evaluation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
  • Conference_Location
    Guilin
  • Print_ISBN
    978-1-4799-3296-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2014.7021632
  • Filename
    7021632
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=242412