DocumentCode
242414
Title
Schottky barrier height modulation in metal/N-Ge system
Author
Gong, Z.J. ; Wang, S.K. ; Yang, Xu ; Sun, B. ; Zhao, Wanfang ; Chang, H.D. ; Liu, H.G.
Author_Institution
Microwave Devices & Integrated Circuits Dept., Inst. of Microelectron., Beijing, China
fYear
2014
fDate
28-31 Oct. 2014
Firstpage
1
Lastpage
3
Abstract
Fermi level pinning at the Ge valence band results in a high Schottky barrier height (SBH) for all metal/n-Ge contacts. In this work, by inserting an ultrathin insulator between metal and germanium, the SBH of Al/Ge can be reduced from 0.6 eV to about 0.3 eV. Barrier height reduction was measured and compared for several inserted insulators. This structure has application as a low resistance ohmic contact for Ge nMOSFETs.
Keywords
Fermi level; Schottky barriers; aluminium; elemental semiconductors; germanium; ohmic contacts; semiconductor-metal boundaries; valence bands; Al-Ge; Fermi level pinning; Schottky barrier height modulation; low-resistance ohmic contact; metal-n-Ge system; n-MOSFET; ultrathin insulator; valence band; Aluminum oxide; Insulators; Modulation; Resistance; Schottky barriers; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location
Guilin
Print_ISBN
978-1-4799-3296-2
Type
conf
DOI
10.1109/ICSICT.2014.7021633
Filename
7021633
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