Irregular 2D structure in the light emitting diode surface patterned by NSOM lithography

Author

Kubicova, Ivana ; Pudis, Dusan ; Suslik, L´ubos ; Skriniarova, Jaroslava

Author_Institution

Dept. of Phys., Univ. of Zilina, Zilina, Slovakia

fYear

2012

fDate

21-22 May 2012

Firstpage

504

Lastpage

507

Abstract

In this paper, we present near-field scanning optical microscope (NSOM) in illumination mode as effective tool for semiconductor device surface patterning. In the illumination mode, the non-contact mode of the NSOM lithography is performed, where the fiber probe exposes defined spots in thin photoresist layer. As the scanning technique allows irregular two-dimensional patterning of different surfaces, this was applied on the GaAs/AlGaAs based light emitting diode surface. Patterned surface was analyzed by optical microscope and atomic force microscope.

Keywords

aluminium compounds; gallium arsenide; lithography; near-field scanning optical microscopy; photoresists; GaAs-AlGaAs; NSOM lithography; atomic force microscope; illumination mode; irregular 2D structure; light emitting diode surface; near-field scanning optical microscope; photoresist layer; semiconductor device surface patterning; two-dimensional patterning; Light emitting diodes; Lithography; Microscopy; Optical fibers; Optical surface waves; Surface treatment; irregular 2D structure; light emitting diode surface patterning; near-field scanning optical microscope lithography; photonic structure;

fLanguage

English

Publisher

ieee

Conference_Titel

ELEKTRO, 2012

Conference_Location

Rajeck Teplice

Print_ISBN

978-1-4673-1180-9

Type

conf

DOI

10.1109/ELEKTRO.2012.6225675

Filename

6225675