Study of the read function for bloch line memories

In Bloch Line memories understanding of the reading process is fundamental for the operation of the memory. The principle of this function is to discriminate parallel and antiparallel domain walls by chopping at different currents. Many parameters can influence this scheme, namely quasistatic or dynamic conditions, material characteristics, actual wall structure before and during chopping. The goal of this paper is to present a systematic study of these factors in order to give indications for practical devices.