InGaAs Complementary metal-oxide-semiconductor fabricated on GaAs Substrate using Al2O3 as gate oxide

Author

Chang, H.D. ; Zhou, J.H. ; Liu, G.M. ; Zeng, Z.H. ; Zhao, Wanfang ; Sun, B. ; Wang, S.K. ; Zhou, X.L. ; Pan, J.Q. ; Liu, H.G.

Author_Institution

Microwave Device & IC Dept., Inst. of Microelectron., Beijing, China

fYear

2014

fDate

28-31 Oct. 2014

Firstpage

1

Lastpage

3

Abstract

In this paper, an In_0.22Ga_0.78As buried channel PMOS and an In_0.22Ga_0.78As surface channel NMOS have been fabricated on GaAs substrate. A gate length of 20 um In_0.22Ga_0.78As PMOS shows a maximum drain current of 3 mA/mm, peaks of transconductor of 0.8 mS/mm. A gate length of 20 um In_0.22Ga_0.78As surface channel NMOS shows a maximum drain current of 11 mA/mm and peaks of transconductor of 9 mS/mm. The surface channel InGaAs MOSFETs show mobility of 750 cm²/Vs, and the InGaAs pMOSFETs show effective channel mobility of 180 cm²/Vs.

Keywords

CMOS integrated circuits; MOSFET; gallium arsenide; indium compounds; Al₂O₃; CMOS devices; In_0.22Ga_0.78As; InGaAs; MOSFET; buried channel PMOS; channel mobility; complementary metal-oxide-semiconductor devices; drain current; gate oxide; size 20 mum; surface channel NMOS; Abstracts; Annealing; Logic gates; MOSFET; MOSFET circuits; Medical services; Nitrogen;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4799-3296-2

Type

conf

DOI

10.1109/ICSICT.2014.7021653

Filename

7021653