DocumentCode
242485
Title
A Ring Oscillator based reliability structure for duty-cycle measurement under BTI stresses
Author
Lei Ai ; Yandong He ; Fang Qiao ; Ganggang Zhang ; Xing Zhang
Author_Institution
Key Lab. of Microelectron. Devices & Circuits, Peking Univ., Beijing, China
fYear
2014
fDate
28-31 Oct. 2014
Firstpage
1
Lastpage
3
Abstract
The static BTI stress (DC stress) have a significant influence on duty cycle of Ring Oscillators, low power SRAMs and dynamic register files because of its asymmetrical gradation. A ring oscillator based structure is proposed to measure the duty cycle of an inverter chain based ring oscillator. The proposed structure can measure the duty cycle shifts conveniently and accurately. Simulating results shows that benefiting from the continuous accumulation, the duty-cycle of the inverter chain can be measured accurately.
Keywords
SRAM chips; flip-flops; integrated circuit reliability; low-power electronics; oscillators; BTI stresses; DC stress; SRAM; duty-cycle measurement; dynamic register files; inverter chain based ring oscillator; reliability structure; static BTI stress; Abstracts; Degradation; Integrated circuit reliability; Oscillators; Reliability engineering; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location
Guilin
Print_ISBN
978-1-4799-3296-2
Type
conf
DOI
10.1109/ICSICT.2014.7021666
Filename
7021666
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