• DocumentCode
    242485
  • Title

    A Ring Oscillator based reliability structure for duty-cycle measurement under BTI stresses

  • Author

    Lei Ai ; Yandong He ; Fang Qiao ; Ganggang Zhang ; Xing Zhang

  • Author_Institution
    Key Lab. of Microelectron. Devices & Circuits, Peking Univ., Beijing, China
  • fYear
    2014
  • fDate
    28-31 Oct. 2014
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    The static BTI stress (DC stress) have a significant influence on duty cycle of Ring Oscillators, low power SRAMs and dynamic register files because of its asymmetrical gradation. A ring oscillator based structure is proposed to measure the duty cycle of an inverter chain based ring oscillator. The proposed structure can measure the duty cycle shifts conveniently and accurately. Simulating results shows that benefiting from the continuous accumulation, the duty-cycle of the inverter chain can be measured accurately.
  • Keywords
    SRAM chips; flip-flops; integrated circuit reliability; low-power electronics; oscillators; BTI stresses; DC stress; SRAM; duty-cycle measurement; dynamic register files; inverter chain based ring oscillator; reliability structure; static BTI stress; Abstracts; Degradation; Integrated circuit reliability; Oscillators; Reliability engineering; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
  • Conference_Location
    Guilin
  • Print_ISBN
    978-1-4799-3296-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2014.7021666
  • Filename
    7021666