DocumentCode :
242485
Title :
A Ring Oscillator based reliability structure for duty-cycle measurement under BTI stresses
Author :
Lei Ai ; Yandong He ; Fang Qiao ; Ganggang Zhang ; Xing Zhang
Author_Institution :
Key Lab. of Microelectron. Devices & Circuits, Peking Univ., Beijing, China
fYear :
2014
fDate :
28-31 Oct. 2014
Firstpage :
1
Lastpage :
3
Abstract :
The static BTI stress (DC stress) have a significant influence on duty cycle of Ring Oscillators, low power SRAMs and dynamic register files because of its asymmetrical gradation. A ring oscillator based structure is proposed to measure the duty cycle of an inverter chain based ring oscillator. The proposed structure can measure the duty cycle shifts conveniently and accurately. Simulating results shows that benefiting from the continuous accumulation, the duty-cycle of the inverter chain can be measured accurately.
Keywords :
SRAM chips; flip-flops; integrated circuit reliability; low-power electronics; oscillators; BTI stresses; DC stress; SRAM; duty-cycle measurement; dynamic register files; inverter chain based ring oscillator; reliability structure; static BTI stress; Abstracts; Degradation; Integrated circuit reliability; Oscillators; Reliability engineering; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
Type :
conf
DOI :
10.1109/ICSICT.2014.7021666
Filename :
7021666
Link To Document :
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